-
Epitaxy (prefix epi-
means "on top of”)
refers to a type of
crystal growth or
material deposition in
which new
crystalline layers are
formed with one or...
- doi:10.1063/5.0060327. S2CID 246660179. Pavesi, M. (2018). "ε-Ga2O3
epilayers as a
material for solar-blind UV photodetectors".
Materials Chemistry...
- S. Pereira; R.W.
Martin (2007). "Localization of
excitation in
InGaN epilayers" (PDF). Phil. Mag. 87 (13): 1999–2017. Bibcode:2007PMag...87.1999K. doi:10...
- and
bring down the
bottom of
conduction band.[citation needed]
AlInP epilayers grown by metal-organic vapour-phase
epitaxy on GaAs
substrates exhibit...
- Cox, J. A. (2001). "Solution
growth of
thick III–V
antimonide alloy epilayers (In****b, InGaSb, InGa****b, AlGa****b, and In****bP) for "virtual substrates""...
-
while leaving the
epitaxial layer undamaged,
resulting in high
quality epilayers and high
deposition rates (up to 10 nm/s). The
substrate (typically a...
- "Photoelectrochemical
Characterization and
Durability Analysis of
GaInPN Epilayers".
Journal of the
Electrochemical Society. 155 (9): B903. Bibcode:2008JElS...
- are
frequently visible between the
epilayer and the
remaining lower part of the thallus. In
certain areas, the
epilayer may
exhibit discontinuities, especially...
-
strength between adatoms and the surface.
While it is
possible to grow
epilayers from a
liquid solution, most
epitaxial growth occurs via a
vapor phase...
-
exactly matched to that of HgCdTe. This
eliminates most
defects from the
epilayer of HgCdTe. CdTe was
developed as an
alternative substrate in the '90s....
