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Epitaxy (prefix epi-
means "on top of”) is a type of
crystal growth or
material deposition in
which new
crystalline layers are
formed with one or more...
- Molecular-beam
epitaxy (MBE) is an
epitaxy method for thin-film
deposition of
single crystals. MBE is
widely used in the
manufacture of semiconductor...
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Metalorganic vapour-phase
epitaxy (MOVPE), also
known as
organometallic vapour-phase
epitaxy (OMVPE) or
metalorganic chemical vapour deposition (MOCVD)...
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manufacturers in
fabrication plants for
processes such as
atomic layer deposition,
epitaxy,
chemical vapor deposition, and diffusion. The
company was
founded by Arthur...
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Hydride vapour-phase
epitaxy (HVPE) is an
epitaxial growth technique often emplo**** to
produce semiconductors such as GaN, GaAs, InP and
their related...
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Chemical beam
epitaxy (CBE)
forms an
important class of
deposition techniques for
semiconductor layer systems,
especially III-V
semiconductor systems...
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Atomic layer epitaxy (ALE), more
generally known as
atomic layer deposition (ALD), is a
specialized form of thin film
growth (
epitaxy) that
typically deposit...
- epiwafer) is a
wafer of
semiconducting material made by
epitaxial growth (
epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics...
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Epitaxy refers to a type of
crystal growth or
material deposition in
which new
crystalline layers are
formed with one or more well-defined orientations...
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Selective area
epitaxy is the
local growth of
epitaxial layer through a
patterned amorphous dielectric mask (typically SiO2 or Si3N4)
deposited on a semiconductor...
