- MOSFET.
Another near-synonym is insulated-gate field-effect
transistor (
IGFET). The
basic principle of the field-effect
transistor was
first patented...
-
characteristics of a transistor: in insulated-gate field-effect
transistors (
IGFET), "pinch-off"
refers to the
channel pinching that
leads to
current saturation...
- BSIM (Berkeley Short-channel
IGFET Model)
refers to a
family of
MOSFET transistor models for
integrated circuit design. It also
refers to the BSIM group...
-
divided into two families:
junction FET (JFET) and
insulated gate FET (
IGFET). The
IGFET is more
commonly known as a metal–oxide–semiconductor FET (MOSFET)...
-
confusing since pinch off
applied to insulated-gate field-effect
transistor (
IGFET)
refers to the
channel pinching that
leads to
current saturation behavior...
- (JFET),
which are three-terminal semiconductors, and
insulated gate FET (
IGFET),
which are four-terminal semiconductors.
Other devices implementing the...
-
transistor (
IGFET) was
theorized as a
potential alternative to
junction transistors, but
researchers were
unable to
build working IGFETs,
largely due...
- field-effect transistor) is a type of insulated-gate field-effect
transistor (
IGFET) that is
fabricated by the
controlled oxidation of a semiconductor, typically...
- as
MISFET (metal–insulator–semiconductor field-effect transistor), and
IGFET (insulated-gate FET). A
schematic of a
MISFET is
shown in
Figure 1a. The...
-
MOSFET device, and was
among the
creators of the
Berkeley Short‐Channel
IGFET Model family of MOSFETs.
Since the 1980s, Hu has
written extensively on...
