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Magnetoresistive random-access
memory (MRAM) is a type of non-volatile random-access
memory which stores data in
magnetic domains.
Developed in the mid-1980s...
- and
extraordinary magnetoresistance (EMR) can be observed. The
first magnetoresistive effect was
discovered in 1856 by
William Thomson,
better known as Lord...
- (MEMS) and
other devices. GMR
multilayer structures are also used in
magnetoresistive random-access
memory (MRAM) as
cells that
store one bit of information...
- memories), single-cycle
write speeds, and
gamma radiation tolerance.
Magnetoresistive RAM
stores data in
magnetic storage elements called magnetic tunnel...
- thin-film head
element for reading. The
separate read
element uses the
magnetoresistive (MR)
effect which changes the
resistance of a
material in the presence...
-
Magnetoresistive level sensor...
-
modern non
contact TPS
include Hall
effect sensors,
inductive sensors,
magnetoresistive and others. In the
potentiometric type sensors, a multi-finger metal...
-
United States. It
develops and
manufactures discrete magnetoresistive RAM or
magnetoresistive random-access
memory (MRAM) products,
including Toggle...
-
sensors that can be used: the
inductive sensor, Hall
Effect sensor,
magnetoresistive sensor, and
optical sensor.
Inductive sensors have the
simplest construction...
- platter.
Later development made use of spintronics; in read heads, the
magnetoresistive effect was much
greater than in
earlier types, and was
dubbed "giant"...
