- have been
given the
generic name "
FinFETs"
because the source/drain
region forms fins on the
silicon surface. The
FinFET devices have
significantly faster...
-
Technical Journal, vol. 46, no. 4, 1967, pp. 1288–1295 Colinge, J.P. (2008).
FinFETs and
Other Multi-Gate Transistors.
Springer Science &
Business Media. p...
-
several 16 nm
FinFETs die-on
wafers manufacturing processes: 16 nm
FinFET (Q4 2014), 16 nm
FinFET+ (cca[clarify] Q4 2014), 16 nm
FinFET "Turbo" (estimated...
-
either side of the fin
separates it from the gate. SOI
FinFETs with a
thick oxide on top of the
fin are
called double-gate and
those with a thin
oxide on...
-
Katherine (April 20, 2017). "Will Self-Heating Stop
FinFETs".
Semiconductor Engineering. "
FinFET". "Foundries Rush 3-D
Transistors - IEEE Spectrum". Bohr...
-
Technical Journal, vol. 46, no. 4, 1967, pp. 1288–1295 Colinge, J.P. (2008).
FinFETs and
Other Multi-Gate Transistors.
Springer Science &
Business Media. p...
-
covered in
their entirety by the same gate, just like
FinFETs usually have
several physical fins side by side that are
electrically a
single unit and are...
- "Nanowires give
vertical transistors a boost". 2
August 2012. "What's
After FinFETs?". 24 July 2017. "Transistor
Options Beyond 3nm". 15
February 2018. Patterson...
- multi-gate
MOSFET technology,
while TSMC's "3 nm"
process still uses
FinFET (
fin field-effect transistor) technology,
despite TSMC
developing GAAFET transistors...
- (ULL)) 20 nm 16 nm (options:
FinFET (FF),
FinFET Plus (FF+),
FinFET Compact (FFC)) 12 nm (options:
FinFET Compact (FFC),
FinFET Nvidia (FFN)),
enhanced version...
