- A
fin field-effect
transistor (
FinFET) is a
multigate device, a
MOSFET (metal–oxide–semiconductor field-effect transistor)
built on a
substrate where...
- device,
based on
FinFET technology. In 2011, Rice
University researchers Masoud Rostami and
Kartik Mohanram demonstrated that
FINFETs can have two electrically...
-
slower in
operation than
FETs.
Chemical field-effect
transistor CMOS
FET amplifier Field effect (semiconductor)
FinFET Flow
FET Multigate device Lilienfeld...
- with "F"
suffixes are
without iGPUs.
Fabrication process: TSMC N5
FinFET (N6
FinFET for the I/O die). v t e Self
identifies as "AMD
Radeon Graphics"....
- (ULL)) 20 nm 16 nm (options:
FinFET (FF),
FinFET Plus (FF+),
FinFET Compact (FFC)) 12 nm (options:
FinFET Compact (FFC),
FinFET Nvidia (FFN)),
enhanced version...
- metal–oxide–semiconductor field-effect
transistor (MOSFET, MOS-
FET, or MOS
FET) is a type of field-effect
transistor (
FET), most
commonly fabricated by the
controlled oxidation...
- multi-gate
MOSFET technology,
while TSMC's "3 nm"
process still uses
FinFET (
fin field-effect transistor) technology,
despite TSMC
developing GAAFET transistors...
-
transistor (MuGFET)
Fin field-effect
transistor (
FinFET), source/drain
region shapes fins on the
silicon surface GAAFET,
Similar to
FinFET but
nanowires are...
-
Katherine (April 20, 2017). "Will Self-Heating Stop
FinFETs".
Semiconductor Engineering. "
FinFET". "Foundries Rush 3-D
Transistors - IEEE Spectrum". Bohr...
- 10, respectively. The
architecture incorporates either 16 nm
FinFET (TSMC) or 14 nm
FinFET (Samsung) technologies. Initially,
chips were only produced...
